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Parylene based encapsulation

Encapsulation utilizing a thin parylene-C This paper presents an embedded chip integra- tion technology that incorporates silicon housings and flexible Parylene-based microelectromechanical systems (MEMS) devices. Accelerated-lifetime soak testing is performed in saline at elevated temperatures to study the packaging performance of Parylene C thin films. Experimental results show that the silicon chip under test is well protected by Parylene, and the lifetime of Parylene- coated metal at body temperature (37 ◦C) is more than 60 years, indicating that Parylene C is an excellent structural and packaging material for biomedical applications. To demonstrate the proposed  packaging technology, a flexible MEMS radio-frequency (RF) coil has been integrated with an RF identification (RFID) circuit die. The coil has an inductance of 16 μH with two layers of metal completely encapsulated in Parylene C, which is microfabricated using a Parylene–metal–Parylene thin-film technology. The chip is a commercially available read-only RFID chip with a typical operating frequency of 125 kHz. The functionality of the embed- ded chip has been tested using an RFID reader module in both air and saline, demonstrating successful power and data transmission through the MEMS coil.  Downdload file Carbon Nanotubes on to CMOS Circuitry with Parylene-C Encapsulation Chia-Ling Chen1, Vinay Agarwal2, Sameer Sonkusale2 and Mehmet R. Dokmeci1 Department of Electrical and Computer Engineering, Northeastern University, Boston, MA, USA Department of Electrical and Computer Engineering, Tufts University, Medford, MA, USA
This paper presents heterogeneous integration of Single-Walled Carbon Nanotubes (SWNTs) with CMOS integrated circuits using die-level post processing. The chip was fabricated using the AMI 0.5μm CMOS Technology. An electroless zincation process was performed over the Aluminum assembly electrodes (Metal 3 of CMOS technology) to clean and to coat the electrodes with a thin Zinc layer. Low temperature dielectrophoretic assembly was utilized for the placement of the SWNTs on to these electrodes. Encapsulating the CMOS chip with a thin (1μm) parylene-C layer stabilized the SWNT-electrode contact resistance and also provided environmental protection. Electrical measurements from the assembled SWNTs yield ohmic behavior with a two-terminal resistance of ~44KΩ. The SWNTs were incorporated on to the CMOS chip as a feedback element of a two-stage Miller compensated high gain operational amplifier.
The measured small signal ac gain (~1.95) from the inverting amplifier confirmed the successful integration of carbon nanotubes with the CMOS circuitry. This paper lays the foundation for the realization of next generation integrated nanosystems with active nanostructures on CMOS integrated circuits.
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